Please use this identifier to cite or link to this item:
https://cris.library.msu.ac.zw//handle/11408/5615
Title: | A comprehensive study of the impact of dislocation loops on leakage currents in Si shallow junction devices | Authors: | C. Nyamhere A. Scheinemann A. Schenk A. Scheit F. Olivie F. Cristiano CNRS , LAAS, 7 avenue du colonel Roche, F-31400 Toulouse, France; Univ de Toulouse , LAAS, F-31400 Toulouse, France; Midlands State University , P. Bag 9055, Gweru, Zimbabwe ETH Zürich , Gloriastr. 35, 8092 Zurich, Switzerland ETH Zürich , Gloriastr. 35, 8092 Zurich, Switzerland IHP, Im Technologiepark 25 , 15236 Frankfurt (Oder), Germany CNRS , LAAS, 7 avenue du colonel Roche, F-31400 Toulouse, France; Univ de Toulouse , LAAS, F-31400 Toulouse, France CNRS , LAAS, 7 avenue du colonel Roche, F-31400 Toulouse, France; Univ de Toulouse , LAAS, F-31400 Toulouse, France |
Keywords: | Dislocation loops Leakage currents Si shallow junction devices |
Issue Date: | 9-Nov-2015 | Publisher: | American Institute of Physics | Abstract: | In this work, the electrical properties of dislocation loops and their role in the generation of leakage currents in p-n or Schottky junctions were investigated both experimentally and through simulations. Deep Level Transient Spectroscopy (DLTS) reveals that the implantation of silicon with 2 × 1015 Ge cm−2 and annealing between 1000 °C and 1100 °C introduced two broad electron levels EC − 0.38 eV and EC − 0.29 eV in n-type samples and a single broad hole trap EV + 0.25 eV in the p-type samples. These trap levels are related to the extended defects (dislocation loops) formed during annealing. Dislocation loops are responsible for the significant increase of leakage currents which are attributed to the same energy levels. The comparison between structural defect parameters and electrical defect concentrations indicates that atoms located on the loop perimeter are the likely sources of the measured DLTS signals. The combined use of defect models and recently developed DLTS simulation allows reducing the number of assumptions and fitting parameters needed for the simulation of leakage currents, therefore improving their predictability. It is found that simulations based on the coupled-defect-levels model reproduce well the measured leakage current values and their field dependence behaviour, indicating that leakage currents can be successfully simulated on the exclusive basis of the experimentally observed energy levels. | URI: | https://cris.library.msu.ac.zw//handle/11408/5615 |
Appears in Collections: | Research Papers |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
A comprehensive study of the impact of dislocation loops.pdf | Full-Text | 3.68 MB | Adobe PDF | View/Open |
Page view(s)
48
checked on Aug 30, 2024
Download(s)
4
checked on Aug 30, 2024
Google ScholarTM
Check
Altmetric
Items in MSUIR are protected by copyright, with all rights reserved, unless otherwise indicated.