Browsing by Author Chawanda, Albert


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Issue DateTitleAuthor(s)
2011Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2 MeV proton irradiation
2009The dependence of barrier height on temperature for Pd Schottky contacts on ZnO
2010Determination of the laterally homogeneous barrier height of palladium Schottky barrier diodes on n-Ge (1 1 1)
Feb-2012Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (1 0 0)
2012Effects of high temperature annealing on single crystal ZnO and ZnO devices
2010Electrical and structural characterization of metal germanides
2011Electrical characterisation of Ruthenium Schottky contacts on n- Ge (1 0 0)
2016Energy harvesting for wireless sensor networks: opportunities and challenges: paper presented at a conference held on 14-16 July 2015, Elephant Hills Resort, Victoria Falls, Zimbabwe
2013Erratum to: enhancing power generation of piezoelectric bimorph device through geometrical optimization
2016Experimental study of self-powered electronic circuits for piezoelectric energy harvesting: paper presented at a conference held on 14-16 July 2015 at Elephant Hills Resort, Victoria Falls, Zimbabwe
2010Finite element modelling of a Piezoelectric beam and comparative performance study of Piezoelectric materials for voltage generation
Aug-2013Maximum Useable Frequency Prediction Using Vertical Incidence Data
2009Microstructural and surface characterization of thin gold films on n-Ge (111)
2012Piezoelectric Energy Harvesting Devices: An Alternative Energy Source for Wireless Sensors
2012Piezoelectric energy harvesting using synchronized switching techniques
2017Radio frequency energy harvesting sources
2018Radio propagation prediction for HF communications
2013A study of the T2 defect and the emission properties of the E3 deep level in annealed melt grown ZnO single crystals
2012Thermal annealing behaviour of Pd Schottky contacts on melt-grown single crystal ZnO studied by IV and CV measurements
2010Thermal annealing behaviour of platinum, nickel and titanium Schottky barrier diodes on n-Ge (1 0 0)