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DC Field | Value | Language |
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dc.contributor.author | Chawanda, Albert | - |
dc.contributor.author | Mtangi, Wilbert | - |
dc.contributor.author | Auret, F.D. | - |
dc.contributor.author | Nel, Jackie M. | - |
dc.contributor.author | Nyamhere, Cloud | - |
dc.contributor.author | Diale, M. | - |
dc.date.accessioned | 2021-06-02T12:23:25Z | - |
dc.date.available | 2021-06-02T12:23:25Z | - |
dc.date.issued | 2012 | - |
dc.identifier.issn | 0921-4526 | - |
dc.identifier.uri | https://doi.org/10.1016/j.physb.2011.09.089 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/abs/pii/S092145261100980X | - |
dc.identifier.uri | http://hdl.handle.net/11408/4323 | - |
dc.description.abstract | The variation in electrical characteristics of Au/n-Ge (1 0 0) Schottky contacts have been systematically investigated as a function of temperature using current–voltage (I−V) measurements in the temperature range 140–300 K. The I–V characteristics of the diodes indicate very strong temperature dependence. While the ideality factor n decreases, the zero-bias Schottky barrier height (SBH) (ΦB) increases with the increasing temperature. The I–V characteristics are analyzed using the thermionic emission (TE) model and the assumption of a Gaussian distribution of the barrier heights due to barrier inhomogeneities at the metal–semiconductor interface. The zero-bias barrier height ΦB vs. 1/2 kT plot has been used to show the evidence of a Gaussian distribution of barrier heights and values of ΦB=0.615 eV and standard deviation σs0=0.0858 eV for the mean barrier height and zero-bias standard deviation have been obtained from this plot, respectively. The Richardson constant and the mean barrier height from the modified Richardson plot were obtained as 1.37 A cm−2 K−2 and 0.639 eV, respectively. This Richardson constant is much smaller than the reported of 50 A cm−2 K−2. This may be due to greater inhomogeneities at the interface. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Elsevier | en_US |
dc.relation.ispartofseries | Physica B: Condensed Matter;Vol. 407; No. 10: p.1574-1577 | - |
dc.subject | Schottky contacts | en_US |
dc.subject | Current–voltage–temperature | en_US |
dc.subject | Schottky barrier height | en_US |
dc.subject | Gaussian distribution | en_US |
dc.subject | Inhomogeneities | en_US |
dc.title | Current-voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes | en_US |
dc.type | Article | en_US |
item.cerifentitytype | Publications | - |
item.fulltext | With Fulltext | - |
item.languageiso639-1 | en | - |
item.openairetype | Article | - |
item.grantfulltext | open | - |
item.openairecristype | http://purl.org/coar/resource_type/c_18cf | - |
Appears in Collections: | Research Papers |
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Document1.pdf | Abstract | 67.95 kB | Adobe PDF | View/Open |
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