Please use this identifier to cite or link to this item: https://cris.library.msu.ac.zw//handle/11408/418
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dc.contributor.authorMtangi, Wilfred-
dc.contributor.authorAuriet, F.D.-
dc.contributor.authorDiale, M.-
dc.contributor.authorChawanda, Albert-
dc.contributor.authorMeyer, de H-
dc.contributor.authorRensburg, P.J Janse-
dc.contributor.authorNel, J. M.-
dc.date.accessioned2014-09-01T10:13:53Z-
dc.date.available2014-09-01T10:13:53Z-
dc.date.issued2012-
dc.identifier.urihttp://hdl.handle.net/11408/418-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.ispartofseriesJournal of Applied Physics; Vol.3-
dc.subjectHigh temperature annealingen_US
dc.titleEffects of high temperature annealing on single crystal ZnO and ZnO devicesen_US
dc.typeArticleen_US
item.cerifentitytypePublications-
item.fulltextWith Fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.languageiso639-1en-
item.openairetypeArticle-
item.grantfulltextopen-
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