Please use this identifier to cite or link to this item: https://cris.library.msu.ac.zw//handle/11408/1855
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dc.contributor.authorChawanda, Albert-
dc.date.accessioned2016-10-30T11:58:45Z-
dc.date.available2016-10-30T11:58:45Z-
dc.date.issued2010-
dc.identifier.urirepository.up.ac.za/dspace/bitstream/handle/2263/28009/00front.pdf?sequence-
dc.identifier.urihttp://hdl.handle.net/11408/1855-
dc.description.abstractMetal-semiconductor contacts have been widely studied in the past 60 years. These structures are of importance in the microelectronics industry. As the scaling down of silicon-based complementary metal-oxide-semiconductor (CMOS) devices becomes more and more challenging, new material and device structures to relax this physical limitation in device scaling are now required. Germanium (Ge) has been proposed as a potential alternative to silicon.en_US
dc.language.isoenen_US
dc.publisherUniversity of Pretoriaen_US
dc.subjectElectrical,structural characterization, metal germanidesen_US
dc.titleElectrical and structural characterization of metal germanidesen_US
dc.typeThesisen_US
item.grantfulltextnone-
item.openairetypeThesis-
item.languageiso639-1en-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
item.fulltextNo Fulltext-
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