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  <title>MSUIR Collection:</title>
  <link rel="alternate" href="https://cris.library.msu.ac.zw//handle/11408/1854" />
  <subtitle />
  <id>https://cris.library.msu.ac.zw//handle/11408/1854</id>
  <updated>2026-05-03T04:23:45Z</updated>
  <dc:date>2026-05-03T04:23:45Z</dc:date>
  <entry>
    <title>Electrical and structural characterization of metal  germanides</title>
    <link rel="alternate" href="https://cris.library.msu.ac.zw//handle/11408/1855" />
    <author>
      <name>Chawanda, Albert</name>
    </author>
    <id>https://cris.library.msu.ac.zw//handle/11408/1855</id>
    <updated>2022-06-27T13:49:07Z</updated>
    <published>2010-01-01T00:00:00Z</published>
    <summary type="text">Title: Electrical and structural characterization of metal  germanides
Authors: Chawanda, Albert
Abstract: Metal-semiconductor  contacts  have  been  widely  studied  in  the  past  60  years. These structures  are  of  importance  in  the  microelectronics  industry.    As  the scaling  down  of silicon-based   complementary   metal-oxide-semiconductor   (CMOS)   devices   becomes more  and  more  challenging,  new  material  and  device  structures  to  relax  this  physical limitation  in  device  scaling  are  now  required.  Germanium  (Ge)  has  been  proposed  as  a potential alternative to silicon.</summary>
    <dc:date>2010-01-01T00:00:00Z</dc:date>
    <dc:creator>Chawanda, Albert</dc:creator>
  </entry>
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